Reminder: Seminar Announcement - ICTP Mlab Research Programme

[ICTP info point]

TODAY - Monday, 10 September at 3.00 p.m.

ICTP Main Building New Conference Room (237) -  2nd floor, old wing

http://cdsagenda5.ictp.it/full_display.php?ida=a07239

Seminar: Recent Advances in NanoMOFSET Technology

Professor Arezki Benfdila
LMPDS, Faculty of Electrical Engineering and Computer Sciences
The University M. Mammeri, Tizi-Ouzou,  Algeria,  benfdila at mail.ummto.dz
Associate, Abdus Salam ICTP, Trieste Italy, abenfdil at ictp.it

Abstract:

High density integrated circuits (HDICs) are facing challenges in their 
further development aiming higher device performances. HDICs 
performances have been improved by shrinking transistor’s dimensions 
which are now at the nanoscale.
Low dimensions led to device engineering such as the AHLATID, LDD, 
Large angle Tilt, LATID or drain engineered MOSFETs.  ONO MOSFETs are 
introduced to increase gate dielectric breakdown, which is more 
pronounced using high k dielectric such as Hafnium oxide HfO2.Besides 
the engineered MOSFET, SOI (Silicon On Insulator) is an alternative 
technology to overcome short channel effects (especially hot carriers) 
in HDICs. SOI devices can be single or double gate, rectangular or 
surrounded gate. Bulk MOSFETs are featured to include drain halo doping 
to reduce impact ionization near the drain regions.

New device technologies are introduced in the case of NanoMOSFETs, 
Ultrathin body MOSFET and ballistic MOSFETs in which electronic 
transport models are based on ballistic transport are the candidates 
for the future HDCIs. The CNFET (Carbon Nanotube MOSFET) is another 
alternative of NanoFETs but not ready at all for the HDICs integration. 
The same thing is observed in the case of the Molecular Transistor 
which is under investigation and developments.


All those interested are most welcome to attend!

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