Errata corrige: CBM seminar: Monday, 14 July 2008, 3 PM

[Cristina Leonesi]

Dear All, 

You are kindly invited to the next CBM seminar: 


Nanofabrication strategies for the development of new tools for biosensing 


Dr. Gemma Rius Suñé 
Institut de Microelectrònica de Barcelona, IMB-CNM-CSIC (Spain) 
Moderator: Dott. Marco Lazzarino 

Monday, 14 July 2008, 3 PM 
Meeting Room CBM, Q building, 1st floor 
AREA Science Park, Basovizza (TS) 


ABSTRACT 
The specific recognition of biological entities requires the implementation of dedicated and high performance systems. More importantly, when the register of individual events is pursued the mechanisms often differ from the standard analitical methods. 
Electron beam lithography (EBL) has been consolidated as the most common technique for patterning at the nanoscale meter range. Its use as the basic step of Nanofabrication has enabled the feasibility of structures and devices intended in the research field of Nanotechnology and Nanoscience. 
EBL use for the development of a wide range of nanostructures, nanodevices and nanosystems has been, and continues to be, crucial for the applications of mask production, prototyping and discrete devices for fundamental research and this fact relies on its high resolution, flexibility and compatibility with other conventional fabrication processes. 
This seminar reflects part of the work performed at the Nanofabrication Laboratory of the IMB–CNM-CSIC during the past 5 years in the development of my research. Specifically, most of the work has been realized in (and has been conditioned by) the framework of three European research projects: Novopoly, NaPa and Charpan. In addition, contributions to SpotNosed and Biofinger projects are also presented. 
Finally, carbon nanotube (CNT) based devices contribute to some tasks of national projects Crenatun (Crecimiento de Nanotubos de Carbon Unidireccional) and Sensonat (Tecnología para sistema sensores y electrodos basados en nanotubos de carbono). In particular, the technology for fabrication of high performance CNT field-effect transistors and their preparation for sensing applications has been established and will be here resumed. 

For information: info at cbm.fvg.it 

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