Fri. seminar

[CM ICTP - Trieste]

CONDENSED MATTER AND STATISTICAL PHYSICS SECTION
	
Joint ICTP/Democritos

INFORMAL SEMINAR on Chemical Physics





Friday, 31 March   -    11:00 a.m.




Room 239  Main Bldg.- II floor



M.G. BOCKSTEDTE  (Universidad Pais Vasco, San Sebastian & Universität 
Erlangen - Nürnberg)



"Intrinsic point defects in semiconductors:   How the physics of a tiny 
entity protrudes
into the macroscopic world"


	Abstract

Intrinsic point defects in semiconductor represent the smallest 
conceivable perturbation of the ideal crystal lattice.  These 
omnipresent defects display appealing physical properties that have 
important technological implications.  Intrinsic point defects possess 
localized states deep within the band gap and can compensate dopants 
thus effecting the electronic properties of a material. The ground 
state of vacancies (empty lattice sites), for example, is governed by a 
competition between th electron-electron interaction and 
electron-phonon coupling, eventually resulting in a competion between a 
  "high-spin'', high symmetry o a "low  spin'', Jahn-Teller distorted 
ground state. On the other hand  intrinsic defects are mobile and can 
diffuse through the material.  They are thus pivotal for the mass 
transport and for the annealing of processed material.  The talk will 
illustrate these aspects for intrinsic defects in Silicon Carbide from 
the theoretical point of view.  Emphasis is also put on the link to 
recent experimental work that enabled together with theoretical efforts 
an identification of individual defects.

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